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| DSEI 19-06AS Fast Recovery Epitaxial Diode (FRED) VRRM = 600 V IFAVM = 20 A trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-263 AA NC DSEI 19-06AS A C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol IFRMS IFAVM IFRM IFSM Conditions TVJ = TVJM TC = 65C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms t = 8.3 ms TVJ = 150C; t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine Maximum Ratings 25 20 150 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W g Features International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TO-263 AA Outline I2t TVJ = 45C t = 10 ms t = 8.3 ms TVJ = 150C; t = 10 ms t = 8.3 ms TVJ TVJM Tstg Ptot Weight TC = 25C 61 2 Symbol IR Conditions TVJ = 25C; VR = VRRM TVJ = 25C; VR = 0.8 * VRRM TVJ = 125C; VR = 0.8 * VRRM IF = 16 A; TVJ = 150C TVJ= 25C Characteristic Values typ. max. 50 25 3 1.5 1.7 1.12 23.2 2 A A mA V V V m K/W ns A VF VT0 rT RthJC trr IRM Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C VR = 350 V; IF = 12 A; -diF/dt = 100 A/s L 0.05 H; TVJ = 100C 35 4 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 417 50 4.4 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions .029 (c) 2004 IXYS All rights reserved 1-2 DSEI 19-06AS Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. IXYS reserves the right to change limits, test conditions and dimensions 417 2-2 (c) 2004 IXYS All rights reserved |
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